DESCRIPTION:
· N-Channel enhancement mode high density IGBT die
· Passivation: Polyimide, 20 um, over Silicon Nitride, .8um
· Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.
· Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach

FEATURES:
· Low Forward Voltage Drop, Low Tail Current
· Avalanche and Surge Rated
· High Freq. Switching to 20KHz
· Ultra Low Leakage Current
· RBSOA and SCSOA Rated
· Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix