DESCRIPTION:
The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications.

FEATUREs
·  Gold Metallization
·  Diffused Emitter Ballasting
·  Internal Input Matching
·  Designed for Linear Operation
·  High Saturated Power Capability
·  Common Emitter Configuration
·  POUT 30 W MIN
·  Gain   7.5 dB
·  Efficiency  55% (Typ)
·  20:1 VSWR
·  Overdrive Survivability 5 dB