RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral

MOSFETs Designed for broadband commercial and industrial applications with frequen cies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.

• Typical Performance at 945 MHz, 26 Volts
   Output Power — 60 Watts PEP
   Power Gain — 18.0 dB
   Efficiency — 40% (Two Tones)
   IMD — -31.5 dBc
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power

FEATUREs
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
• TO-272-2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.