1090 MHz, 250 W, 50 V PULSED LATERAL N-CHANNEL RF POWER MOSFET

RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA, Pout = 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 10%
   Power Gain — 21 dB
   Drain Efficiency — 60%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak Power

FEATUREs
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.