1090 MHz, 10 W, 50 V PULSED LATERAL N--CHANNEL RF POWER MOSFET

RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.
 
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 10 mA, Pout = 10 Watts Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 20%
   Power Gain — 25 dB
   Drain Efficiency — 69%

FEATUREs
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.