Motorola’s MRF2947 device contains two high performance, low–noise NPN silicon bipolar transistors. This device has two 941 die housed in the high performance six leaded SC–70ML package; yielding a 9 GHz current gain–bandwidth product.
The RF performance at levels of 1 volt and 1 mA makes the MRF2947 well suited for low–voltage, low–current, front–end applications such as paging, cellular, GSM, DECT, CT2 and other portable wireless systems. The MRF2947 is fully ion–implanted with gold metallization and nitride passivation for maximum device reliability, performance and uniformity.

• Low Noise Figure, NF = 1.5 dB (Typ) @ 1 GHz @ 5 mA
• High Current Gain–Bandwidth Product, ft = 9 GHz (Typ) @ 6 Volts, 15 mA
• Maximum Stable Gain, 18 dB @ 1 GHz @ 5 mA
• Output Third Order Intercept, OIP3 = +27 dBm
• Available in Tape and Reel Packaging Options:
    T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel
    T2 Suffix = 3,000 Units per 8 mm, 7 inch Reel (reverse device orientation in tape)