The RF MOSFET Line 150W, to 150MHz, 28V

Designed primarily for linear large–signal output stages up to 150 MHz frequency range.

N–Channel enhancement mode

• Specified 28 volts, 30 MHz characteristics
   Output power = 150 watts
   Power gain = 15 dB (Typ.)
   Efficiency = 40% (Typ.)
• Superior high order IMD
• IMD(d3) (150 W PEP): –30 dB (Typ.)
• IMD(d11) (150 W PEP): –60 dB (Typ.)
• 100% tested for load mismatch at all phase angles with 30:1 VSWR