The RF MOSFET Line
RF Power
Field-Effect Transistors
N-Channel Enhancement-Mode MOSFET
Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.
• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 30 Watts
Broadband Gain = 14 dB (Typ)
Efficiency = 54% (Typical)
• Small–Signal and Large–Signal
Characterization
• 100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
• Space Saving Package For
Push–Pull Circuit
Applications
• Excellent Thermal Stability,
Ideally Suited For Class A
Operation
• Facilitates Manual Gain
Control, ALC and
Modulation Techniques