The RF Line
Microwave Pulse Power Transistors

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.

• Guaranteed Performance @ 1090 MHz, 50 Vdc
    Output Power = 90 Watts Peak
    Minimum Gain = 8.4 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized for Long Life and Resistance to Metal Migration
• Internal Input Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.