MRF10031(V2) Даташит - M/A-COM Technology Solutions, Inc.
Номер в каталоге
MRF10031
Компоненты Описание
Other PDF
PDF
page
6 Pages
File Size
626.1 kB
производитель
M/A-COM Technology Solutions, Inc.
Description and Applications
Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters.
FEATUREs
• Guaranteed performance @ 960-1215MHz, 36Vdc
• Output power: 30W peak
• Minimum gain: 9.0dB min., 9.5dB typ.
• 100% tested for load mismatch at all phase angles with 10:1 VSWR
• Hermetically sealed, industry standard package
• Silicon nitride passivated
• Gold metallized, emitter ballasted for long life and resistance to
metal migration
• Internal input matching for broadband operation
Номер в каталоге
Компоненты Описание
PDF
производитель
Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz
M/A-COM Technology Solutions, Inc.
Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 350W (peak), 1025–1150MHz ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Share Link: