INTRODUCTION
The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

FEATURES
• Fast 35ns Read/Write Cycle
• SRAM Compatible Timing, Uses Existing SRAM Controllers Without
   Redesign
• Unlimited Read & Write Endurance
• Data Always Non-volatile for >20 years at Temperature
• One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
   System for Simpler, More Efficient Design
• Replace battery-backed SRAM solutions with MRAM to eliminate
   battery assembly, improving reliability
• 3.3 Volt Power Supply
• Automatic Data Protection on Power Loss
• Commercial, Industrial, Automotive Temperatures
• RoHS-Compliant SRAM TSOP2 Package
• RoHS-Compliant SRAM BGA Package
• AEC-Q100 Grade 1 Qualified