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MP4006(2002) Даташит - Toshiba

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MP4006

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High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load Switching.

• Small package by full molding (SIP 10 pin)
• High collector power dissipation (4 devices operation) : IC (DC) = ±2 A (max)
• High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A)

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TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) ( Rev : 2000 )
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TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR 4 IN 1) ( Rev : 2000 )
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TOSHIBA POWER TRANSISTOR MODULE SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER TRANSISTOR 4 IN 1) ( Rev : 2000 )
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TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
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TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) ( Rev : 2002 )
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