Power MOSFET 2 Amps, 20 Volts
N−Channel SOT−223

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc−dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement to Interface Power Loads to Logic Level
   ICs, VGS(th) = 2 Volts Max
• The SOT−223 Package can be Soldered Using Wave or Reflow. The
   Formed Leads Absorb Thermal Stress During Soldering, Eliminating
   the Possibility of Damage to the Die