NPN Silicon Power Transistor
1 kV SWITCHMODE Series

These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications.

FEATUREs:
• Collector-Emitter Voltage — VCEV = 1000 Vdc
• Fast Turn-Off Times
   80 ns Inductive Fall Time — 100°C (Typ)
   120 ns Inductive Crossover Time — 100°C (Typ)
   800 ns Inductive Storage Time — 100°C (Typ)
• 100°C Performance Specified for:
   Reverse-Biased SOA with Inductive Load
   Switching Times with Inductive Loads
   Saturation Voltages
   Leakage Currents
• Extended FBSOA Rating Using Ultra-fast Rectifiers
• Extremely High RBSOA Capability

Typical Applications:
• Switching Regulators
• Inverters
• Solenoids
• Relay Drivers
• Motor Controls
• Deflection Circuits