NPN SILICON HIGH-VOLTAGE TRANSISTORS

. . . useful for general–purpose, high voltage applications requiring high fT.

FEATURES:
• Collector–Emitter Sustaining Voltage — VCEO(sus) = 350 V (Min) @ IC = 2.5 mA
• DC Current Gain — hFE = 40 (Min) @ IC = 100 mA — MJE2361T
• Current–Gain–Bandwidth Product — fT = 10 MHz (Typ) @ IC = 50 mA