datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  ON Semiconductor  >>> MJD128T4G PDF

MJD128T4G(2012) Даташит - ON Semiconductor

MJD128T4G image

Номер в каталоге
MJD128T4G

Компоненты Описание

Other PDF
  lastest PDF  

PDF
DOWNLOAD     

page
6 Pages

File Size
164.4 kB

производитель
ONSEMI
ON Semiconductor ONSEMI

Complementary Darlington Power Transistor
DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching applications.


FEATUREs
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors
• High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• ESD Ratings:
    ♦ Human Body Model, 3B > 8000 V
    ♦ Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
    Unique Site and Control Change Requirements; AEC−Q101
    Qualified and PPAP Capable
• These are Pb−Free Devices*

Page Link's: 1  2  3  4  5  6 

Номер в каталоге
Компоненты Описание
PDF
производитель
Complementary Darlington Power Transistor
ON Semiconductor
Complementary Darlington Power Transistor ( Rev : 2011 )
ON Semiconductor
Complementary Darlington Power Transistor
ON Semiconductor
COMPLEMENTARY DARLINGTON POWER TRANSISTOR
Semelab - > TT Electronics plc
Complementary Darlington Power Transistor ( Rev : 2005 )
ON Semiconductor
COMPLEMENTARY DARLINGTON POWER TRANSISTOR
Semelab - > TT Electronics plc
Complementary Darlington Power Transistor
ON Semiconductor
Complementary Darlington Power Transistor ( Rev : 2005 )
ON Semiconductor
COMPLEMENTARY POWER DARLINGTON ( Rev : V2 )
Comset Semiconductors
COMPLEMENTARY POWER DARLINGTON
Comset Semiconductors

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]