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MJD112 Даташит - Inchange Semiconductor

MJD112 image

Номер в каталоге
MJD112

Компоненты Описание

Other PDF
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PDF
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page
3 Pages

File Size
320.8 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• High DC current gain
• Lead formed for surface mount applications(NO suffix)
• Straight lead(IPAK,“ -I” suffix)
• Built-in a damper diode at E-C
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation


APPLICATIONS
• Designed for general purpose amplifier and low speed switching applications.

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Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.

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