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MJB13007 Даташит - Inchange Semiconductor

MJB13007 image

Номер в каталоге
MJB13007

Компоненты Описание

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2 Pages

File Size
208.1 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector–Emitter Sustaining Voltage
   : VCEO(SUS) = 400V(Min.)
• Collector Saturation Voltage: VCE(sat) = 2.0(Max) @ IC= 5.0A
• Switching Time : tf= 0.9μ s(Max.)@ IC= 5.0A
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation


APPLICATIONS
• Designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for
   115 and 220V switchmode applications such as switching
   regulators,inverters,Motor controls,Solenoid/Relay drivers
   and deflection circuits.


Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor ( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor

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