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MJ11032 Даташит - Inchange Semiconductor

MJ11032 image

Номер в каталоге
MJ11032

Компоненты Описание

Other PDF
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page
2 Pages

File Size
46.4 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage
   : V(BR)CEO= 120V(Min.)
• High DC Current Gain-
   : hFE= 1000(Min.)@IC= 25A
   : hFE= 400(Min.)@IC= 50A
• Complement to Type MJ11033


APPLICATIONS
• Designed for use as output devices in complementary
   general purpose amplifier applications.

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Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.

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