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MJ11014 Даташит - Inchange Semiconductor

MJ11014 image

Номер в каталоге
MJ11014

Компоненты Описание

Other PDF
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page
2 Pages

File Size
46.7 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
    : V(BR)CEO= 90V(Min.)
• High DC Current Gain-
    : hFE= 1000(Min.)@IC= 20A
• Low Collector Saturation Voltage-
    : VCE (sat)= 3.0V(Max.)@ IC= 20A
• Complement to Type MJ11013
   
APPLICATIONS
• Designed for use as output devices in complementary
    general purpose amplifier applications.
   

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Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.

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