Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficient operation at high frequencies.

• Industry Standard TO–220 Package
• High Speed Eoff: 67 μJ/A typical at 125°C
• Low On–Voltage – 1.7 V typical at 8.0 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes