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MGFC41V5964(2004) Даташит - MITSUBISHI ELECTRIC

MGFC41V5964 image

Номер в каталоге
MGFC41V5964

Компоненты Описание

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3 Pages

File Size
205.5 kB

производитель
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability.


FEATURES
   Internally matched to 50ohm system
   High output power
      P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz
   High power gain
      GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz
   High power added efficiency
      Eadd = 33 % (TYP.) @ f=5.9 - 6.4 GHz
   Low Distortion[Item-51]
      IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.


APPLICATION
   5.9 - 6.4GHz band amplifiers

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Номер в каталоге
Компоненты Описание
PDF
производитель
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
Mitsumi
5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
5.9 ~ 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1998 )
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
5.9 ~ 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC

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