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MGFC36V3436 Даташит - MITSUBISHI ELECTRIC

MGFC36V3436 image

Номер в каталоге
MGFC36V3436

Компоненты Описание

Other PDF
  2011  

PDF
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page
2 Pages

File Size
178.9 kB

производитель
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
    Class A operation
    Internally matched to 50(ohm) system
    High output power P1dB = 4W (TYP.) @ f=3.4~3.6GHz
    High power gain GLP = 13.5 dB (TYP.) @ f=3.4~3.6GHz
    High power added efficiency P.A.E. = 32 % (TYP.) @ f=3.4~3.6GHz
    Low distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.


APPLICATION
    item 01 : 3.4~3.6 GHz band power amplifier
    item 51 : 3.4~3.6 GHz band digital radio communication

Page Link's: 1  2 

Номер в каталоге
Компоненты Описание
PDF
производитель
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
Mitsumi
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
MITSUBISHI ELECTRIC
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC

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