datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  MITSUBISHI ELECTRIC   >>> MGF1403B PDF

MGF1403B Даташит - MITSUBISHI ELECTRIC

MGF1403B image

Номер в каталоге
MGF1403B

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
5 Pages

File Size
303.4 kB

производитель
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGF1403B is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.


FEATURES
● Low noise figure NFmin = 1.8 dB (MAX.) @ f = 12 GHz
● High associated gain Gs = 10.5 dB (MIN.) @ f = 12 GHz
● High reliability and stability


APPLICATION
   S to Ku band low-noise amplifiers

Page Link's: 1  2  3  4  5 

Номер в каталоге
Компоненты Описание
PDF
производитель
LOW NOISE GaAs FET
MITSUBISHI ELECTRIC
LOW NOISE GaAs FET
MITSUBISHI ELECTRIC
LOW NOISE GaAs FET
MITSUBISHI ELECTRIC
Low Noise pHEMT GaAs FET
Unspecified
Low Noise pHEMT GaAs FET
Sirenza Microdevices => RFMD
Low Noise pHEMT GaAs FET
Sirenza Microdevices => RFMD
Low Noise pHEMT GaAs FET
Sirenza Microdevices => RFMD
Low Noise pHEMT GaAs FET
Stanford Microdevices
Low Noise pHEMT GaAs FET
Stanford Microdevices
TAPE CARRIER LOW NOISE GaAs FET
MITSUBISHI ELECTRIC

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]