DESCRIPTION
The MD56V62160/H is a 4-bank x 1,048,576-word x 16-bit synchronous dynamic RAM, fabricated in Okis CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

FEATURES
• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 4-bank x 1,048,576-word x 16-bit configuration
• 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
    – CAS latency (2, 3)
    – Burst length (2, 4, 8)
    – Data scramble (sequential, interleave)
• CBR auto-refresh, Self-refresh capability
• Package:
    54-pin 400 mil plastic TSOP (Type II) (TSOPII54-P-400-0.80-K) (Product : MD56V62160/H-xxTA)
                                                                                                        xx indicates speed rank.