This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

FEATUREs
• Low On-Resistance
• 1.8V drive
• High Speed Switching
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance

Typical Applications
• DC/DC Converter