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MBT3906DW1T1G(2005) Даташит - ON Semiconductor

MBT3906DW1T1G image

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MBT3906DW1T1G

Компоненты Описание

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  2009   lastest PDF  

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6 Pages

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100.9 kB

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ON-Semiconductor
ON Semiconductor ON-Semiconductor

Dual General Purpose Transistor

The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.


FEATUREs
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• Pb−Free Package is Available


Номер в каталоге
Компоненты Описание
PDF
производитель
GENERAL PURPOSE DUAL TRANSISTOR ( Rev : 2012 )
Unisonic Technologies
GENERAL PURPOSE DUAL TRANSISTOR ( Rev : Old_V )
Unisonic Technologies
GENERAL PURPOSE (DUAL TRANSISTOR)
Unisonic Technologies
Dual General Purpose Transistor
Willas Electronic Corp.
Dual General Purpose Transistor
ON Semiconductor
Dual General Purpose Transistor
ON Semiconductor
Dual General Purpose Transistor
ON Semiconductor
Dual General Purpose Transistor
ON Semiconductor
Dual General Purpose Transistor
ON Semiconductor
Dual General Purpose Transistor
Willas Electronic Corp.

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