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HOME  >>>  Vishay Semiconductors  >>> MBRF1090CT-E3/4W PDF

MBRF1090CT-E3/4W Даташит - Vishay Semiconductors

MBR10100CT-E3/4W image

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MBRF1090CT-E3/4W

Компоненты Описание

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5 Pages

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679.6 kB

производитель
Vishay
Vishay Semiconductors Vishay

FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
  For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.

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Компоненты Описание
PDF
производитель
High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2011 )
Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors

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