The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.
FEATUREs
• Guardring for Stress Protection
• Low Forward Voltage
• 100°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Short Heat Sink Tab Manufactured − Not Sheared
• Similar in Size to the Industry Standard TO−220 Package
• Pb−Free Packages are Available