datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Vishay Semiconductors  >>> MBRB20100CT-E3 PDF

MBRB20100CT-E3 Даташит - Vishay Semiconductors

MBR20100CT-E3 image

Номер в каталоге
MBRB20100CT-E3

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
5 Pages

File Size
150.9 kB

производитель
Vishay
Vishay Semiconductors Vishay

FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB and ITO-220AB
package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Page Link's: 1  2  3  4  5 

Номер в каталоге
Компоненты Описание
PDF
производитель
Dual Common-Cathode High-Voltage Schottky Rectifier
Bruckewell Technology LTD
Dual Common-Cathode High-Voltage Schottky Rectifier ( Rev : 2010 )
Vishay Semiconductors
Dual Common-Cathode High-Voltage Schottky Rectifier
Vishay Semiconductors
Dual Common-Cathode High-Voltage Schottky Rectifier
Vishay Semiconductors
Dual Common Cathode High Voltage Schottky Rectifier
Vishay Semiconductors
Dual Common Cathode High Voltage Schottky Rectifier ( Rev : 2020 )
Vishay Semiconductors
Dual Common-Cathode High-Voltage Schottky Rectifier ( Rev : 2008 )
Vishay Semiconductors
Dual Common-Cathode High-Voltage Schottky Rectifier ( Rev : 2011 )
Vishay Semiconductors
Dual Common-Cathode High-Voltage Schottky Rectifier
Vishay Semiconductors
Dual Common Cathode High Voltage Schottky Rectifier ( Rev : 2022 )
Vishay Semiconductors

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]