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MBR2080CT Даташит - ON Semiconductor

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MBR2080CT

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ON Semiconductor ON-Semiconductor

SWITCHMODE™ Power Rectifiers

This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features:


FEATUREs
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Shipped 50 units per plastic tube
• Pb−Free Packages are Available*

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Компоненты Описание
PDF
производитель
Power Rectifiers
Kersemi Electronic Co., Ltd.
Power Rectifiers ( Rev : V2 )
Kersemi Electronic Co., Ltd.
Power Rectifiers ( Rev : V2 )
Kersemi Electronic Co., Ltd.
Power Rectifiers
Kersemi Electronic Co., Ltd.
Power Rectifiers ( Rev : V2 )
Kersemi Electronic Co., Ltd.
Power Rectifiers
Kersemi Electronic Co., Ltd.
Power Rectifiers
Kersemi Electronic Co., Ltd.
Power Rectifiers
Yea Shin Technology Co., Ltd
Power Rectifiers
Kersemi Electronic Co., Ltd.
Power Rectifiers
Kersemi Electronic Co., Ltd.

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