■ DESCRIPTION
The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

■ FEATURES
• 0.23 µm Process Technology
• Single 3.0 V read, program and erase
    Minimizes system level power requirements
• Compatible with JEDEC-standards
    Uses same software commands with single-power supply Flash
• Address don’t care during the command sequence
• Industry-standard pinouts
    48-pin TSOP (I) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance
    90 ns maximum access time
• Flexible sector architecture
    One hundred twenty-eight 32K word sectors
    Any combination of sectors can be concurrently erased. Also supports full chip erase
• Hidden ROM (Hi-ROM) region
    128 word of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
    Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP input pin
    At VIL, allows protection of first or last 32K word sector, regardless of sector protection/unprotection status
    At VIH, allows removal of protection
    MBM29LV650UE: has the function to protect the last 32K word sector (SA 127)
    MBM29LV651UE: has the function to protect the first 32K word sector (SA 0)
• ACC input pin
    At VACC, increases program performance
• Embedded EraseTM* Algorithms
    Automatically pre-programs and erases the chip or any sector
• Embedded programTM* Algorithms
    Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
    When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume
    Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection
    Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
    Temporary sector group unprotection via the RESET pin
    This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)