DESCRIPTIONS
The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, MB85R1002 is able to retain data without back-up battery.
The memory cells used for the MB85R1002 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance.
The MB85R1002 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.

FEATURES
• Bit configuration : 65,536 words x 16 bits
• Read/write endurance : 1010 times
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : -20 °C to +85 °C
• LB and UB data byte control
• 48-pin, TSOP(1) plastic package