General Description
   The MAX11008 controller biases RF LDMOS power devices found in cellular base stations and other wireless infrastructure equipment. Each controller includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor the LDMOS drain current over a range of 20mA to 5A. The MAX11008 supports up to two external diode-connected transistors to monitor the LDMOS temperatures while an internal temperature sensor measures the local die temperature. 

FEATUREs
✦ On-Chip 4Kb EEPROM for Storing LDMOS Bias
   Characteristics
✦ Integrated High-Side Current-Sense PGA with
   Gain of 2, 10, or 25
✦ ±0.75% Accuracy for Sense Voltage Between
   +75mV and +1250mV
✦ Full-Scale Sense Voltage
   +100mV with a Gain of 25
   +250mV with a Gain of 10
   +1250mV with a Gain of 2
✦ Common-Mode Range, LDMOS Drain Voltage:
   +5V to +32V
✦ Adjustable Low-Noise 0 to AVDD Output Gate
   Bias Voltage Range
✦ Fast Clamp to AGND for LDMOS Protection
✦ 12-Bit DAC Control of Gate with Temperature
✦ Internal Die Temperature Measurement
✦ 2-Channel External Temperature Measurement
   through Remote Diodes
✦ Internal 12-Bit ADC Measurement for
   Temperature, Current, and Voltage Monitoring
✦ User-Selectable Serial Interface
   400kHz/1.7MHz/3.4MHz I2C-Compatible Interface
   16MHz SPI-/MICROWIRE-Compatible Interface

APPLICATIONs
   Cellular Base Stations
   Microwave Radio Links
   Feed-Forward Power Amps
   Transmitters
   Industrial Process Control