Description
M/A-COMs MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode “On” resistance than conventional GaAs devices. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance ( 4 W ), low capacitance ( 20 fF ), and extremely fast switching speed, ( 5 nS ). They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling.

FEATUREs
■ Ultra Low Capacitance < 22 fF
■ Excellent RC Product < 0.10 pS
■ High Switching Cutoff Frequency > 110 GHz
■ 5 Nanosecond Switching Speed
■ Driven by Standard +5 V TTL PIN Diode Driver
■ Silicon Nitride Passivation
■ Polyamide Scratch Protection

APPLICATIONs
   The ultra low capacitance of the MA4AGBLP912 device allows
   use through W-band (110 GHz) applications. The low RC product
   and low profile of the PIN diodes makes it ideal for use in
   microwave and millimeter wave switch designs, where lower
   insertion loss and higher isolation are required. The + 10 mA ( low
   loss state ) and the 0v ( isolation state ) bias of the diodes allows
   the use a simple + 5 V TTL gate driver. These AlGaAs diodes are
   used as switching arrays on radar systems, high-speed ECM
   circuits, optical switching networks, instrumentation, and other
   wideband multi-throw switch assemblies.