Description
M/A-COMs MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode “On” resistance than conventional GaAs devices. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit low series resistance, 4Ω, low capacitance, 28fF, and an extremely fast switching speed of 5nS. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly.

FEATUREs
♦ Low Series Resistance
♦ Low Capacitance
♦ Millimeter Wave Switching & Cutoff Frequency
♦ 5 Nanosecond Switching Speed
♦ Can be Driven by a Buffered +5V TTL
♦ Silicon Nitride Passivation
♦ Polyimide Scratch Protection
♦ RoHS Compliant

APPLICATIONs
   The ultra low capacitance of the MA4AGBLP912 device
   makes it ideally suited for use through W-band. The low
   RC product and low profile of the beamlead PIN diode
   allows for use in microwave and millimeter wave switch
   designs, where low insertion loss and high isolation are
   required. The operating bias conditions of +10mA for the
   low loss state, and 0v, for the isolation state permits the
   use of a simple +5V TTL gate driver. These AlGaAs,
   beamlead diodes, can be used in switching arrays on
   radar systems, high speed ECM circuits, optical
   switching networks, instrumentation, and other wideband
   multi-throw switch assemblies.