DESCRIPTION
The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).Two types of devices are available. VP,KV(normal lead bend type package),RV,KR(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

● Single +5V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by S1,S2
● Data hold on +2V power supply
● Three-state outputs : OR - tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
   M5M51008BP ············ 32pin 600mil DIP
   M5M51008BFP ············ 32pin 525mil SOP
   M5M51008BVP,RV ············ 32pin 8 X 20 mm2 TSOP
   M5M51008BKV,KR ············ 32pin 8 X 13.4 mm2 TSOP