SUMMARY DESCRIPTION
The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a DoubleWord basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally a 12V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
   – VDD = 2.7V to 3.6V for Program, Erase and Read
   – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
   – VPP = 12V for fast Program (optional)
■ HIGH PERFORMANCE
   – Access Time: 80, 90 and 100ns
   – 56MHz Effective Zero Wait-State Burst Read
   – Synchronous Burst Reads
   – Asynchronous Page Reads
■ HARDWARE BLOCK PROTECTION
   – WP pin Lock Program and Erase
■ SOFTWARE BLOCK PROTECTION
   – Tuning Protection to Lock Program and Erase with 64 bit User Programmable Password (M58BW016B version only)
■ OPTIMIZED for FDI DRIVERS
   – Fast Program / Erase suspend latency time < 6µs
   – Common Flash Interface
■ MEMORY BLOCKS
   – 8 Parameters Blocks (Top or Bottom)
   – 31 Main Blocks
■ LOW POWER CONSUMPTION
   – 5µA Typical Deep Power Down
   – 60µA Typical Standby
   – Automatic Standby after Asynchronous Read
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code M58BW016xT: 8836h
   – Bottom Device Code M58BW016xB: 8835h