GENERAL DESCRIPTION
The Samsung M464S0824DT1 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0824DT1 consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S0824DT1 is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sockets.

FEATURE
• Performance range
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
    Latency (Access from column address)
    Burst length (1, 2, 4, 8 & Full page)
    Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,250mil) , double sided component