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M39432-10VNC6T Даташит - STMicroelectronics

M39432 image

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M39432-10VNC6T

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28 Pages

File Size
219.8 kB

производитель
ST-Microelectronics
STMicroelectronics ST-Microelectronics

DESCRIPTION
The M39432 is a single supply voltage memory device combining Flash memory and EEPROM on a single chip. The memory is mapped in two blocks: 4 Mbit of Flash memory and 256 Kbit of EEPROM. Each block operates independently during a Write cycle: in concurrent mode, the Flash Memory can be read while the EEPROM is being written.

■Multiple Memories on a Single Chip:
– 4 Mbit Flash Memory (organised as 8 sectors)
– 256 Kbit EEPROM
– 64 Byte One Time Programmable Memory
■CONCURRENT Mode (Read Flash while
writing to EEPROM)
■WRITE, PROGRAM and ERASE Status Bits
■2.7V to 3.6V Single Supply Voltage for
PROGRAM, ERASE and READ Operations
■100 ns Access Time (Flash and EEPROM blocks)
■Low Power Consumption
–60µA Stand-by mode (maximum)
– Deep Power Down mode: 6µA (maximum), 200 nA (typical)
■Standard Flash Memory Package
■100,000 Erase/Write Cycles (minimum)
■10 Year Data Retention (minimum)

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Номер в каталоге
Компоненты Описание
PDF
производитель
Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
STMicroelectronics
Single Chip 8 Mbit (1Mb x8 or 512Kb x16) Flash and 256 Kbit Parallel EEPROM Memory
STMicroelectronics
4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory
Silicon Storage Technology
4 Mbit Flash Memory
Sharp Electronics
256 kb Parallel EEPROM
ON Semiconductor
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
Silicon Storage Technology
Flash PSD, 3 V supply, for 8-bit MCUs 4 Mbit + 256 Kbit dual Flash memories and 64 Kbit SRAM
STMicroelectronics
256-Mbit 3.0V Flash
Cypress Semiconductor
4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo
Silicon Storage Technology
256 kb CMOS Parallel EEPROM
ON Semiconductor

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