SUMMARY DESCRIPTION
The M28W640FCT and M28W640FCB are 64 Mbit (4 Mbit x 16) non-volatile Flash memories that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.
FEATURES SUMMARY
◾ SUPPLY VOLTAGE
– VDD = 2.7V to 3.6V Core Power Supply
– VDDQ= 1.65V to 3.6V for Input/Output
– VPP = 12V for fast Program (optional)
◾ ACCESS TIME: 70, 85, 90,100ns
◾ PROGRAMMING TIME:
– 10µs typical
– Double Word Programming Option
– Quadruple Word Programming Option
◾ COMMON FLASH INTERFACE
◾ MEMORY BLOCKS
– Parameter Blocks (Top or Bottom
location)
– Main Blocks
◾ BLOCK LOCKING
– All blocks locked at Power Up
– Any combination of blocks can be locked
– WP for Block Lock-Down
◾ SECURITY
– 128 bit user Programmable OTP cells
– 64 bit unique device identifier
◾ AUTOMATIC STAND-BY MODE
◾ PROGRAM and ERASE SUSPEND
◾ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
◾ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W640FCT: 8848h
– Bottom Device Code, M28W640FCB:
8849h
◾ PACKAGES
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions