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M12L128168A Даташит - [Elite Semiconductor Memory Technology Inc.

M12L128168A image

Номер в каталоге
M12L128168A

Компоненты Описание

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page
22 Pages

File Size
350.4 kB

производитель
ESMT
[Elite Semiconductor Memory Technology Inc. ESMT

GENERAL DESCRIPTION
The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.


FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
   - CAS Latency ( 2 & 3 )
   - Burst Length ( 1, 2, 4, 8 & full page )
   - Burst Type ( Sequential & Interleave )
• All inputs are sampled at the positive going edge of the system clock
• Burst Read single write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)


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Номер в каталоге
Компоненты Описание
PDF
производитель
Synchronous DRAM 2M x 16 Bit x 4 Banks
A-Data Technology
Synchronous DRAM 2M x 16 Bit x 4 Banks
A-Data Technology
Synchronous DRAM - 2M x 16 Bit x 4 Banks
Unspecified
4 Banks x 2M x 8Bit Synchronous DRAM
Hynix Semiconductor
Synchronous DRAM 1M x 16 Bit x 4 Banks
A-Data Technology
1M X 16 Bit X 4 Banks Synchronous DRAM
AMIC Technology
Synchronous DRAM 4M x 16 Bit x 4 Banks
A-Data Technology
Synchronous DRAM 1M x 16 Bit x 4 Banks
A-Data Technology
1M x 16 Bit x 4 Banks Synchronous DRAM
[Elite Semiconductor Memory Technology Inc.
1M x 16 Bit x 4 Banks Synchronous DRAM
[Elite Semiconductor Memory Technology Inc.

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