Description
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

FEATUREs
• Positive temperature
   coefficient for safe
   operation and ease of
   paralleling
• 175 °C maximum
   operating junction
   temperature
• Excellent surge capability
• Extremely fast,
   temperature-independent
   switching behavior
• Dramatically reduced
   switching losses
   compared to Si bipolar
   diodes

APPLICATIONs
• Boost diodes in PFC or
   DC/DC stages
• Switch-mode power
   supplies
• Uninterruptible power
   supplies
• Solar inverters
• Industrial motor drives
• EV charging stations