Description
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

FEATUREs
• Positive temperature coefficient for safe operation and ease of paralleling
• 175 °C maximum operating junction temperature
• Excellent surge capability
• Extremely fast, temperature-independent switching behavior
• Dramatically reduced switching losses compared to Si bipolar diodes

APPLICATIONs
• Boost diodes in PFC or DC/DC stages
• Switch-mode power supplies
• Uninterruptible power supplies
• Solar inverters
• Industrial motor drives
• EV charging stations