DESCRIPTION AND APPLICATIONS
The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 720 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP6872 also features Si3N4 passivation.
Typical applications include commercial wireless infrastructure amplifiers, such as SATCOM uplink ransmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.

FEATURES
♦ 27 dBm Output Power at 1-dB Compression at 18 GHz
♦ 9.5 dB Power Gain at 18 GHz
♦ 55% Power-Added Efficiency