SHARP’s LH28F160S5HNS-L70 Flash memory with Smart 5 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.

16M-BIT (2MBx8/1MBx16) Smart 5 Flash MEMORY

■ Smart 5 Technology
   - 5V VCC
   - 5V VPP
■ Common Flash Interface (CFI)
   - Universal & Upgradable Interface
■ Scalable Command Set (SCS)
■ High Speed Write Performance
   - 32 Bytes x 2 plane Page Buffer
   - 2µs/Byte Write Transfer Rate
■ High Speed Read Performance
   - 70ns(5V±0.25V), 90ns(5V±0.5V)
■ Operating Temperature
   - -40°C to +85°C
■ Enhanced Automated Suspend Options
   - Write Suspend to Read
   - Block Erase Suspend to Write
   - Block Erase Suspend to Read
■ High-Density Symmetrically-Blocked
   Architecture
   - Thirty-two 64K-byte Erasable Blocks
■ SRAM-Compatible Write Interface
■ User-Configurable x8 or x16 Operation
■ Enhanced Data Protection Features
   - Absolute Protection with VPP=GND
   - Flexible Block Locking
   - Erase/Write Lockout during Power
      Transitions
■ Extended Cycling Capability
   - 100,000 Block Erase Cycles
   - 3.2 Million Block Erase Cycles/Chip
■ Low Power Management
   - Deep Power-Down Mode
   - Automatic Power Savings Mode
   - Decreases ICC in Static Mode
■ Automated Write and Erase
   - Command User Interface
   - Status Register
■ Industry-Standard Packaging
   - 56-Lead SSOP
■ ETOXTM* V Nonvolatile Flash
   Technology
■ CMOS Process
   (P-type silicon substrate)
■ Not designed or rated as radiation
   hardened