datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Sharp Electronics  >>> LH532100BD PDF

LH532100BD Даташит - Sharp Electronics

LH532100B image

Номер в каталоге
LH532100BD

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
8 Pages

File Size
74.6 kB

производитель
Sharp
Sharp Electronics Sharp

DESCRIPTION
The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology.


FEATURES
• 262,144 words × 8 bit organization
• Access time: 150 ns (MAX.)
• Low-power consumption:
    Operating: 275 mW (MAX.)
    Standby: 550 µW (MAX.)
• Static operation
• Mask-programmable OE/OE and OE1/OE1/DC
• TTL compatible I/O
• Three-state outputs
• Single +5 V power supply
• Packages:
    32-pin, 600-mil DIP
    32-pin, 525-mil SOP
    32-pin, 450-mil QFJ (PLCC)
    32-pin, 8 × 20 mm2 TSOP (Type I)
    32-pin, 400-mil TSOP (Type II)
• JEDEC standard EPROM pinout (DIP)

Page Link's: 1  2  3  4  5  6  7  8 

Номер в каталоге
Компоненты Описание
PDF
производитель
CMOS 2M (256K × 8) MROM
Sharp Electronics
CMOS 2M (256K × 8/128K × 16) MROM
Sharp Electronics
CMOS 2M (256K × 8/128K × 16) MROM
Sharp Electronics
CMOS 2M (256K × 8/128K × 16) MROM
Sharp Electronics
CMOS 256K (32K × 8) MROM
Sharp Electronics
CMOS 32M (4M × 8/2M × 16) MROM
Sharp Electronics
CMOS 16M (2M × 8/1M × 16) MROM
Sharp Electronics
CMOS 2M (128K × 16) MROM
Sharp Electronics
CMOS 2M (256K × 8) BIT
Fujitsu
2M-BIT [256K x 8] CMOS EPROM
Macronix International

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]