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LH28F320SKTD-L70 Даташит - Sharp Electronics

LH28F320SKTD-L70 image

Номер в каталоге
LH28F320SKTD-L70

Компоненты Описание

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66 Pages

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657.3 kB

производитель
Sharp
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SHARP’s LH28F320SKTD-L70 Dual Work Flash memory with Smart3/5 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.

32-MBIT (2MBx8/1MBx16 x2Bank)
Smart3/5 Dual Work Flash MEMORY

■ Dual 16M-bit Banks Enable the
   Simultaneous Read/Write/Erase
   Operation
■ Smart3/5 Dual Work Technology
   - 2.7V, 3.3V or 5V VCC
   - 2.7V, 3.3V or 5V VPP
■ Common Flash Interface (CFI)
   - Universal & Upgradable Interface
■ Scalable Command Set (SCS)
■ High Speed Read Performance
   - 70ns(5V±0.25V), 80ns(5V±0.5V),
   - 100ns(3.3V±0.3V), 120ns(2.7V-3.6V)
■ Operating Temperature
   - 0°C to +70°C
■ High Speed Write Performance
   - 32 Bytes x 2 plane Page Buffer
   - 2µs/Byte Write Transfer Rate
■ High-Density Symmetrically-Blocked
   Architecture
   - Sixty-four 64-Kbyte Erasable Blocks
■ Extended Cycling Capability
   - 100,000 Block Erase Cycles
   - 3.2 Million Block Erase Cycles/Bank
■ SRAM-Compatible Write Interface
■ User-Configurable x8 or x16 Operation
■ Enhanced Automated Suspend Options
   - Write Suspend to Read
   - Block Erase Suspend to Write
   - Block Erase Suspend to Read
■ Enhanced Data Protection Features
   - Absolute Protection with VPP=GND
   - Flexible Block Locking
   - Erase/Write Lockout during Power
      Transitions
■ Low Power Management
   - Deep Power-Down Mode
   - Automatic Power Savings Mode
   - Decreases ICC in Static Mode
■ Automated Write and Erase
   - Command User Interface
   - Status Register
■ Industry-Standard Packaging
   - 56-Lead TSOP
■ ETOXTM* V Nonvolatile Flash Technology
■ CMOS Process
   (P-type silicon substrate)
■ Not designed or rated as radiation hardened

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