The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V. Its low voltage operation capability greatly extends battery life for portable applications.

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY
■ 32M density with 16Bit I/O Interface
■ High Performance Reads
   • 60/25ns 8-Word Page Mode
■ Configurative 4-Plane Dual Work
   • Flexible Partitioning
   • Read operations during Block Erase or (Page Buffer) Program
   • Status Register for Each Partition
■ Low Power Operation
   • 2.7V Read and Write Operations
   • Automatic Power Savings Mode Reduces ICCR in Static Mode
■ Enhanced Code + Data Storage
   • 5µs Typical Erase/Program Suspends
■ OTP (One Time Program) Block
   • 4-Word Factory-Programmed Area
   • 4-Word User-Programmable Area
■ High Performance Program with Page Buffer
   • 16-Word Page Buffer
   • 5µs/Word (Typ.) at 12V WP#/ACC
■ Operating Temperature 0°C to +70°C
■ CMOS Process (P-type silicon substrate)
■ Flexible Blocking Architecture
   • Eight 4K-word Parameter Blocks
   • Sixty-three 32K-word Main Blocks
   • Bottom Parameter Location
■ Enhanced Data Protection Features
   • Individual Block Lock and Block Lock-Down with Zero-Latency
   • All blocks are locked at power-up or device reset.
   • Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions
Automated Erase/Program Algorithms
   • 3.0V Low-Power 11µs/Word (Typ.)
      Programming
   • 12V No Glue Logic 9µs/Word (Typ.)
      Production Programming and 0.5s Erase (Typ.)
■ Cross-Compatible Command Support
   • Basic Command Set
   • Common Flash Interface (CFI)
■ Extended Cycling Capability
   • Minimum 100,000 Block Erase Cycles
■ 48-Lead TSOP
■ ETOXTM* Flash Technology
■ Not designed or rated as radiation hardened