INTRODUCTION
Sharp’s LH28F004SU 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28F004SU is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES
• 512K × 8 Word Configuration
• 2.7 V Write/Erase Operation (5 V ± 0.5 V VPP, 3.0 V ± 0.3 V VCC, +15°C to +35°C)
    – No Requirement For DC/DC Converter To Write/Erase
• 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)
• Minimum 2.7 V Read Capability
    – 190 ns Maximum Access Time (VCC = 2.7 V, -20°C to +85°C)
    – 180 ns Maximum Access Time (VCC = 2.7 V, 0°C to +70°C)
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
    – Command User Interface
    – Status Register
    – RY»/BY» Status Output
• System Performance Enhancement
    – Erase Suspend For Read
    – Two-Byte Write
    – Full Chip Erase
• Data Protection
    – Hardware Erase/Write Lockout During Power Transitions
    – Software Erase/Write Lockout
• Independently Lockable For Write/Erase On Each Block (Lock Block and Protect Set/Reset)
• 4 µA (Typ.) ICC In CMOS Standby
• 0.2 µA (Typ.) Deep Power-Down
• State-of-the-Art 0.45 µm ETOX™ Flash Technology
• Extended Temperature Operation
    – -20°C to +85°C (Read)
    – +15°C to +35°C (Write/Erase)
• 42-pin, 0.67 mm × 8 mm × 8 mm CSP Package